Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2003-07-23
2008-03-11
Whitehead, Jr., Carl (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29117
Reexamination Certificate
active
07342288
ABSTRACT:
A manufacturing method of a thin film transistor of the present invention includes the steps of (i) forming an electrode formation area in which a source electrode and a drain electrode are formed by applying a droplet of an electrode raw material, (ii) applying the droplet of the electrode raw material on drop-on positions located off a forming area of a semiconductor layer and in the electrode formation area, and (iii) forming the source electrode and the drain electrode in the electrode formation area. With this arrangement, it is possible to surely prevent adherence of a splash droplet on a channel section between each electrode, in forming the source electrode and the drain electrode by applying the droplet of the electrode raw material.
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Fujii Akiyoshi
Nakabayashi Takaya
Birch & Stewart Kolasch & Birch, LLP
Dolan Jennifer M.
Jr. Carl Whitehead
Sharp Kabushiki Kaisha
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