Thin film transistor having a graded metal oxide layer

Details Thin film transistor having a graded metal oxide layer Thin film transistor having a graded metal oxide layer

2008-01-04

2011-11-22

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S072000

Reexamination Certificate

active

08063421

ABSTRACT:
Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor may include a gate; a channel layer; a source and a drain, the source and the drain being formed of metal; and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain. The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.

REFERENCES:
patent: 7112841 (2006-09-01), Eldridge et al.
patent: 7601984 (2009-10-01), Sano et al.
patent: 2006/0027805 (2006-02-01), Koo et al.
patent: 2006/0108636 (2006-05-01), Sano et al.
patent: 2006/0270066 (2006-11-01), Imahayashi et al.
patent: 2006-332613 (2006-12-01), None
patent: 10-2006-0058454 (2006-05-01), None
patent: 10-2006-0123765 (2006-12-01), None
Office Action for corresponding Chinese Patent Application No. 200810080659.7 dated Jun. 8, 2010 with English translation.

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