Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-29
2011-03-29
Sandvik, Benjamin P (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29289, C257SE29292
Reexamination Certificate
active
07915689
ABSTRACT:
A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.
REFERENCES:
patent: 6204519 (2001-03-01), Yamazaki et al.
patent: 2005/0218403 (2005-10-01), Kuo
patent: 2007/0242176 (2007-10-01), Chang et al.
patent: 2008/0173871 (2008-07-01), Noda et al.
Cho Sung-Haeng
Jeong Ki-Hun
Kim Hyung-Jun
Kim Joo-Han
Shim Seung-Hwan
Cantor & Colburn LLP
Kuo W. Wendy
Samsung Electronics Co,. Ltd.
Sandvik Benjamin P
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