Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-05-13
2008-05-13
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C257SE21414
Reexamination Certificate
active
11486330
ABSTRACT:
The present invention provides a manufacturing method of a thin film transistor array panel, which includes forming a gate line on a substrate; forming a gate insulating layer, a semiconductor layer, and an ohmic contact on the gate line; forming a first conducting film including Mo, a second conducting film including Al, and a third conducting film including Mo on the ohmic contact; forming a first photoresist pattern on the third conducting film; etching the first, second, and third conducting films, the ohmic contact, and the semiconductor layer using the first photoresist pattern as a mask; removing the first photoresist pattern by a predetermined thickness to form a second photoresist pattern; etching the first, second, and third conducting films using the second photoresist pattern as a mask to expose a portion of the ohmic contact; and etching the exposed ohmic contact using a Cl-containing gas and a F-containing gas.
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Chin Hong-Kee
Ju Jin-Ho
Kim Jang-Soo
Kim Sang-Gab
Kim Shi-Yul
Huynh Andy
MacPherson Kwok & Chen & Heid LLP
Pellegrini Mark
Samsung Electronics Co,. Ltd.
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