Thin film processing plasma reactor chamber with radially upward

Details Thin film processing plasma reactor chamber with radially upward Thin film processing plasma reactor chamber with radially upward

1997-09-20

2000-06-20

Thibodeau, Paul

Coating apparatus

Gas or vapor deposition

With treating means

156345, 118723MW, 118723I, 118723E, 438710, 438726, 438758, C23C 1600, C23F 102, H01L 21302

Patent

active

060764821

ABSTRACT:
The invention contours the chamber surface overlying semiconductor wafer being processed (i.e., the chamber ceiling) in such a way as to promote or optimize the diffusion of plasma ions from their regions of origin to other regions which would otherwise have a relative paucity of plasma ions. This is accomplished by providing a greater chamber volume over those areas of the wafer otherwise experiencing a shortage of plasma ions and a smaller chamber volume over those areas of the wafer experiencing a plentitude of plasma ions (e.g, due to localized plasma generation occurring over the latter areas). Thus, the ceiling is contoured to promote a plasma ion diffusion which best compensates for localized or non-uniform patterns in plasma ion generation typical of an inductively coupled source (e.g., an overhead inductive antenna). Specifically, the invention provides a lesser ceiling height (relative to the wafer surface) over regions in which plasma ions are generated or tend to congregate and a greater ceiling height in other regions. More specifically, in the case of an overlying inductive antenna where plasma ion density tends to fall off toward the wafer periphery, the ceiling contour is such that the ceiling height increases radially, i.e., toward the wafer periphery. This promotes or increases plasma ion diffusion toward the wafer periphery as a function of the rate at which the ceiling height increases radially.

REFERENCES:
patent: 5698062 (1997-12-01), Sakamoto et al.
patent: 5718795 (1998-02-01), Plavidal et al.
patent: 5753044 (1998-05-01), Hanawa et al.
patent: 5846883 (1998-12-01), Moslehi
patent: 5874704 (1999-02-01), Gates
patent: 5897712 (1999-04-01), Hanawa et al.

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