Thermal CVD/PECVD reactor and use for thermal chemical vapor dep

Details Thermal CVD/PECVD reactor and use for thermal chemical vapor dep Thermal CVD/PECVD reactor and use for thermal chemical vapor dep

1986-12-19

1991-03-19

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118725, 118729, 156345, 20429801, 20429807, 20429809, 20429823, C23C 1646

Patent

active

050001132

ABSTRACT:
A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surfaces. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures.

REFERENCES:
patent: 3627590 (1971-12-01), Mammel
patent: 3661637 (1972-05-01), Sirtl
patent: 4492716 (1985-01-01), Yamazaki
patent: 4496809 (1985-06-01), McNeilly
patent: 4503807 (1985-03-01), Nakayama
patent: 4550685 (1985-11-01), Mahawili
patent: 4625678 (1986-12-01), Shioya
patent: 4693211 (1987-09-01), Ogami
patent: 4695700 (1987-09-01), Provence
patent: 4745088 (1988-05-01), Inoue
patent: 4747368 (1988-05-01), Brien
patent: 4767641 (1988-08-01), Kieser
Webster's New Collegiate Dictionary.RTM. 1975, p. 756, G. & C. Merriam Co., Springfield, Mass.

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