Fishing – trapping – and vermin destroying
Patent
1992-04-01
1994-10-11
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
437235, H01L 2100, H01L 2102
Patent
active
053547152
ABSTRACT:
A high pressure, high throughout, single wafer semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature process for forming a highly conformal layer of silicon dioxide from a plasma of TEOS, oxygen and ozone is also disclosed. This layer can be planarized using an etchback process. Silicon oxide deposition and etchback can be carried out sequentially in the reactor.
REFERENCES:
patent: 3934060 (1976-01-01), Burt et al.
patent: 4002512 (1977-01-01), Lim
patent: 4872947 (1989-10-01), Wang et al.
Sze, VLSI Technology, McGraw.varies.Hill, 1983, pp. 94, 95, 106-108, 116.
Adamik John A.
Collins Kenneth S.
Law Kam S.
Leung Cissy
Maydan Dan
Applied Materials Inc.
Breneman R. Bruce
Everhart B.
Morris Birgit E.
LandOfFree
Thermal chemical vapor deposition of silicon dioxide and in-situ does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thermal chemical vapor deposition of silicon dioxide and in-situ, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thermal chemical vapor deposition of silicon dioxide and in-situ will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1658485