Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-09-18
2007-09-18
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S432000, C257S697000, C257S758000, C257SE21526, C257SE25013
Reexamination Certificate
active
11327641
ABSTRACT:
A test structure and methods of using and making the same are provided. In one aspect, a test structure is provided that includes a first conductor that has a first end and a second conductor that has a second end positioned above the first end. A third conductor is positioned between the first end of the first conductor and the second end of the second conductor. A first electrode is coupled to the first conductor at a first distance from the third conductor and a second electrode coupled to the first conductor at a second distance from the third conductor. A third electrode is coupled to the second conductor at a third distance from the third conductor and a fourth electrode is coupled to the second conductor at a fourth distance from the third conductor. The first through fourth electrodes provide voltage sense taps and the first and second conductors provide current sense taps from which the resistance of the third conductor may be derived.
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Michael Mark
Wu David
Zhu Jianhong
Advanced Micro Devices , Inc.
Honeycutt Timothy M.
Lebentritt Michael
Stevenson Andre′
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