Temperature stable metal nitride gate electrode

Details Temperature stable metal nitride gate electrode Temperature stable metal nitride gate electrode

2007-10-16

2007-10-16

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S231000, C438S591000, C438S942000, C257SE21204, C257SE21334, C257SE21193, C257SE21623, C257SE21637

Reexamination Certificate

active

11203952

ABSTRACT:
An integrated circuit is provided including an FET gate structure formed on a substrate. This structure includes a gate dielectric on the substrate, and a metal nitride layer overlying the gate dielectric and in contact therewith. This metal nitride layer is characterized as MNx, where M is one of W, Re, Zr, and Hf, and x is in the range of about 0.7 to about 1.5. Preferably the layer is of WNx, and x is about 0.9. Varying the nitrogen concentration in the nitride layer permits integration of different FET characteristics on the same chip. In particular, varying x in the WNxlayer permits adjustment of the threshold voltage in the different FETs. The polysilicon depletion effect is substantially reduced, and the gate structure can be made thermally stable up to about 1000° C.

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