Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-04
2006-04-04
Flynn, Nathan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S407000, C257S413000, C257S649000, C257S900000, C257S410000, C257S411000
Reexamination Certificate
active
07023064
ABSTRACT:
An integrated circuit is provided including an FET gate structure formed on a substrate. This structure includes a gate dielectric on the substrate, and a metal nitride layer overlying the gate dielectric and in contact therewith. This metal nitride layer is characterized as MNx, where M is one of W, Re, Zr, and Hf, and x is in the range of about 0.7 to about 1.5. Preferably the layer is of WNx, and x is about 0.9. Varying the nitrogen concentration in the nitride layer permits integration of different FET characteristics on the same chip. In particular, varying x in the WNxlayer permits adjustment of the threshold voltage in the different FETs. The polysilicon depletion effect is substantially reduced, and the gate structure can be made thermally stable up to about 1000° C.
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Cabral, Jr. Cyril
Gluschenkov Oleg
Kim Hyung-jun
Park Dae-Gyu
Blecker Ira D.
Erdem Fazli
Flynn Nathan
International Business Machines - Corporation
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