Technique to control tunneling currents in DRAM capacitors,...

Details Technique to control tunneling currents in DRAM capacitors,... Technique to control tunneling currents in DRAM capacitors,...

2005-12-27

2005-12-27

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C365S185280, C365S230060

Reexamination Certificate

active

06979607

ABSTRACT:
Structures and methods are provided for the use with PMOS devices. Materials with large electron affinities or work functions are provided for structures such as gates. A memory cell is provided that utilizes materials with work functions larger than n-type doped polysilicon (4.1 eV) or aluminum metal (4.1 eV) for gates or capacitor plates.

REFERENCES:
patent: 3387286 (1968-06-01), Dennard
patent: 5408115 (1995-04-01), Chang
patent: 5530581 (1996-06-01), Cogan
patent: 5886368 (1999-03-01), Forbes et al.
patent: 5989958 (1999-11-01), Forbes
patent: 6031263 (2000-02-01), Forbes et al.
patent: 6245613 (2001-06-01), Hsu et al.
patent: 6246089 (2001-06-01), Lin et al.
patent: 6249460 (2001-06-01), Forbes et al.
patent: 6265266 (2001-07-01), Dejenfelt et al.
patent: 6278155 (2001-08-01), Okabe et al.
patent: 6316316 (2001-11-01), Wu
patent: 6351428 (2002-02-01), Forbes
patent: 6383939 (2002-05-01), Yang et al.
patent: 6384448 (2002-05-01), Forbes
patent: 6411160 (2002-06-01), Riho et al.
patent: 6456535 (2002-09-01), Forbes et al.
patent: 6515328 (2003-02-01), Yang et al.
patent: 6583011 (2003-06-01), Xia et al.
patent: 6639835 (2003-10-01), Forbes
patent: 6730960 (2004-05-01), Forbes
patent: 2002/0016081 (2002-02-01), Aloni et al.
patent: 2003/0001197 (2003-01-01), Chang et al.
patent: 2003/0011009 (2003-01-01), Zhang et al.
patent: 2003/0201491 (2003-10-01), Chung
Tiwari, Sandip, “Volatile and Non-Volatile Memories in Silicon with Nano-Crystal Storage”,Int'l Electron Devices Meeting: Technical Digest. Washington, DC, (Dec. 1995), 521-524.
“Silicon Monoxide”,CERAC, inc.-Silicon Monoxide, SIO,(2000),pp. 1-4.
Al-Ani, S.K.J. , et al., “The Effect of Temperature of the Optical Absorption Edge of Amorphous Thin Films of Silicon Monoxide”,phys. stat. sol.(b) 123, (1984),pp. 653-658.
Al-Ani, S.K.J. , et al., “The optical absorption edge of amorphous thin films of silicon monoxide”,Journal of Materials Science, 19, (1984),pp. 1737-1748.
Chand, N. , et al., “Tunability of intrinsic stress SiO/ sub x/ dielectric films formed by molecular beam deposition”,IEE, (1995),2 pages.
Chau, R. , et al., “30nm Physical Gate Length CMOS Tansistors with 1.0 ps n-MOS and 1.7 ps p-MOS Gate Delays”,IEEE Int. Electron. Devices Meeting. San Francisco, (Dec., 2000),pp. 45-48.
DeMichelis, F. , et al., “Doped amorphous and microcrystalline silicon carbide as wide band-gap material”,Wide Band Gap Semiconductors Symposium, Mat. Res. Soc., Pittsburgh, PA, (1992), 1 page.
Eldridge, J. M., et al., “Oxidation of Plasma-Deposited a-SixC1-x: H films”,J. Electrochem. Soc., vol. 137, No. 7,(Jul., 1990),pp. 2266-2271.
Furusawa, T. , et al., “Simple, Reliable Cu/low-k interconnect Integration Using Mechanically-strong Low-k Dielectric Material: Silicon-oxycarbide”,Proc. IEEE Int. Interconnect Technology Conf., (Jun., 2000),pp. 222-224.
Hirayama, M. , et al., “Low-Temperature Growth of High-Integrity Silicon Oxide Films by Oxygen Radical Generated in High-Density Krypton Plasma”,IEEE, (1999),4 pages.
Ilyas, M. , et al., “The optical absorption edge of amorphous thin films of silicon monoxide and of silicon monoxide mixed with titanium monoxide”,IEE, (2001),1 page.
Kubaschewski, O. , et al., “Oxidation of Metals and Alloys”,Butterworths, London, (1962),pp. 53-64.
Maiti, B. , et al., “Metal Gates for Advanced CMOS Technology”,Proc. Microelectronic Device Technology III, Santa Clara, CA, 22-23, Soc. of Photo-Optical Instrumentation Engineers, Bellingham WA,(Sep., 1999),pp. 46-57.
Renlund, G. M., et al., “Silicon oxycarbide glasses: Part I. Preparation and chemistry” ,J. Mater. Res., (Dec., 1991),pp. 2716-2722.
Renlund, G. M., et al., “Silicon oxycarbide glasses: Part II. Structure and properties”,J. Mater. Res., vol. 6, No. 12,(Dec., 1991),pp. 2723-2734.
Robinson, G. , “Passivation hardens lasers for low-cost package”, 3 pages.
Shi, Y. , “Tunneling Leakage Current in Ultrathin (<4 nm) Nitride/Oxide Stack Dielectrics”,IEEE Electron Device Letters, 19(10), (Oct. 1998),pp. 388-390.
Skriver, H. L., et al., “Surface energy and work function of elemental metals”,Physical Review B(Condensed Matter), vol. 46, No. 11,(Sep. 15, 1992),1 page.
Strass, A. , et al., “Fabrication and Characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry”,Thin Solid Films 349, (1999),pp. 135-146.
Sze, S. M., “Physics of Semiconductor Devices”,Wiley, (1969),pp. 402-407.
Sze, S. M., “Physics of Semiconductor Devices,”,Wiley, (1981),pp. 251, 396.

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