Technique for forming a spacer for a line element by using...

Details Technique for forming a spacer for a line element by using... Technique for forming a spacer for a line element by using...

2006-09-19

2006-09-19

Smith, Zandra V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S595000

Reexamination Certificate

active

07109086

ABSTRACT:
The present invention provides a technique that enables the formation of a recessed spacer element by using an anisotropically deposited etch stop layer. Accordingly, in subsequent cleaning processes, material residues of the etch stop layer may be efficiently removed from upper sidewall portions of a line element, thereby increasing the available area for a diffusion path in a subsequent silicidation process. The anisotropic deposition of the etch stop layer may be accomplished by high density plasma enhanced CVD or by directional sputter techniques.

REFERENCES:
patent: 5202277 (1993-04-01), Kameyama et al.
patent: 5874331 (1999-02-01), Nishigohri
patent: 6040223 (2000-03-01), Liu et al.
patent: 6074919 (2000-06-01), Gardner et al.
patent: 6080607 (2000-06-01), Chang et al.
patent: 6140192 (2000-10-01), Huang et al.
patent: 6582974 (2003-06-01), Lui et al.
patent: 6737342 (2004-05-01), Lee et al.
patent: 2003/0011080 (2003-01-01), Deshpande et al.
Schumicki and Seegebrech, “Prozeβtechnologie,” Chapter 7.4, pp. 201-203, 1991.

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