Technique for creating different mechanical strain in...

Details Technique for creating different mechanical strain in... Technique for creating different mechanical strain in...

2008-07-08

2008-07-08

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S618000, C438S761000, C257S369000, C257S635000

Reexamination Certificate

active

07396718

ABSTRACT:
A technique is provided that allows the formation of contact etch stop layers having different intrinsic stress for different transistors, while substantially avoiding any device degradation owing to the partial removal of the contact etch stop layer. Hereby, an additional thin etch stop layer is provided prior to the formation of the contact etch stop layers, thereby substantially maintaining the integrity of metal silicide regions, when a portion of an initially deposited contact etch stop layer is removed.

REFERENCES:
patent: 6573172 (2003-06-01), En et al.
patent: 7193254 (2007-03-01), Chan et al.
patent: 2004/0029323 (2004-02-01), Shimizu et al.
patent: 2004/0075148 (2004-04-01), Kumagai et al.
patent: 102004026149 (2005-12-01), None

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