Technique for compensating for a difference in deposition...

Details Technique for compensating for a difference in deposition... Technique for compensating for a difference in deposition...

2011-01-25

2011-01-25

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S014000, C438S199000, C257S369000, C257SE21529

Reexamination Certificate

active

07875514

ABSTRACT:
By selectively providing a buffer layer having an appropriate thickness, height differences occurring during the deposition of an SACVD silicon dioxide may be reduced during the formation of an interlayer dielectric stack of advanced semiconductor devices. The buffer material may be selectively provided after the deposition of contact etch stop layers of both types of internal stress or may be provided after the deposition of one type of dielectric material and may be used during the subsequent patterning of the other type of dielectric stop material as an efficient etch stop layer.

REFERENCES:
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patent: 7009226 (2006-03-01), Sun
patent: 2006/0091471 (2006-05-01), Frohberg et al.
patent: 2007/0007552 (2007-01-01), Zhu et al.
patent: 2007/0108525 (2007-05-01), Yang et al.
patent: 2007/0200179 (2007-08-01), Chen
patent: 2008/0081480 (2008-04-01), Frohberg et al.
Translation of Official Communication from German Patent Office for German Patent Application No. 10 2007 046 847.6 dated Jun. 16, 2008.

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