Technique for chemical mechanical polishing silicon

Details Technique for chemical mechanical polishing silicon Technique for chemical mechanical polishing silicon

1998-06-13

2000-12-19

Gulakowski, Randy

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

216 38, 216 88, 438692, 438693, B44C 122, H01L 2100

Patent

active

061623687

ABSTRACT:
Chemical mechanical polishing of a silicon layer, such as a polycrystalline silicon, is improved by initially chemical mechanically polishing the silicon layer with an oxide-polishing slurry. Then the silicon layer is chemical mechanically polished with a silicon-polishing slurry until the substrate is planarized.

REFERENCES:
patent: 4671851 (1987-06-01), Beyer et al.
patent: 5702977 (1997-12-01), Jang et al.
patent: 5726099 (1998-03-01), Jaso
patent: 5804507 (1998-09-01), Perlov et al.
patent: 5934980 (1999-08-01), Koss et al.
patent: 5942449 (1999-08-01), Meikle

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