Tasin oxygen diffusion barrier in multilayer structures

Details Tasin oxygen diffusion barrier in multilayer structures Tasin oxygen diffusion barrier in multilayer structures

1996-05-08

1998-07-07

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438653, 438655, 438656, 438657, H01L 2128

Patent

active

057768234

ABSTRACT:
A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractory metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo.

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