Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1998-04-02
2000-07-11
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429801, 20429812, 20429813, 20429823, C23C 1434
Patent
active
060867256
ABSTRACT:
Improved targets for use in DC magnetron sputtering of nickel or like ferromagnetic face-centered cubic (FCC) metals are disclosed for forming metallization films having effective edge-to-edge deposition uniformity of 5%(3.sigma.) or better. Such targets may be characterized as having: (a) a homogeneous texture mix that is at least 20% of a <200> texture content and less than 50% of a <111> texture content, (b) an initial pass-through flux factor (% PTF) of about 30% or greater; and (c) a homogeneous grain size of about 200 .mu.m or less.
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Y. Nakamura et al., "Influence of Permeability on Co Target Usage", Proc. of the 4th ISSP (Kanazawa, 1997), 6 pgs. including pp. 653-655.
Y.M. Ahn et al., "Study on Magneto-Optical TbFeCo Thin Films Magnetron-Sputtered From Targets With Low and High Magnetic Permeabilities", Samsung Electronics Co., LTD., Suwon, Korea, 1997, 3 pgs. (unnumbered).
Abburi Murali
Ramaswami Seshadri
Applied Materials Inc.
Nguyen Nam
Ver Steeg Steven H.
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