Tapered isolated metal profile to reduce dielectric layer cracki

Details Tapered isolated metal profile to reduce dielectric layer cracki Tapered isolated metal profile to reduce dielectric layer cracki

1997-12-18

1999-10-26

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Lead frame

With stress relief

257670, 257674, 257620, 257775, H01L 213205, H01L 27108

Patent

active

059733870

ABSTRACT:
Leading and trailing metal features in a dense array of conductive lines bordering an open field are formed with side surfaces that gradually taper in the direction of the open field toward an underlying substrate. Each side surface bordering the open field is formed with a sufficient slope to reduce cracking of the subsequently deposited dielectric gap fill layer at high stress areas bordering the open field.

REFERENCES:
IBM (Method for metallization patterning, IBM Technical Disclosure Bulletin, IBM Corp. p. 451, vol. 37 No. 05), May 1994.

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