Tantalum lanthanide oxynitride films

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S591000, C438S641000, C438S674000, C438S785000, C257SE21013, C257SE21021, C257SE21168, C257SE21171, C257SE21197, C257SE21209, C257SE21274, C257SE21396, C257SE27087, C257SE29302

Reexamination Certificate

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07544604

ABSTRACT:
Electronic apparatus and methods of forming the electronic apparatus include a tantalum lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The tantalum lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a tantalum lanthanide oxynitride film.

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