Tantalum-containing barrier layers for copper

Details Tantalum-containing barrier layers for copper Tantalum-containing barrier layers for copper

1997-04-29

2000-05-02

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438653, 257751, H01L 2144

Patent

active

06057237&

ABSTRACT:
An improved barrier layer of tantalum to prevent diffusion of copper into a dielectric layer or silicon substrate is made by alternately sputter depositing thin amorphous tantalum layers and tantalum nitride layers. The resultant wholly amorphous tantalum-containing layer leads to a stronger barrier and prevents formation of a columnar structure in thick tantalum layers. The sputter depositions of tantalum and tantalum nitride can be repeated until the desired thickness of the barrier is obtained.

REFERENCES:
patent: 5391517 (1995-02-01), Gelatos et al.
patent: 5676587 (1997-10-01), Landers et al.

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