Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2007-04-30
2010-02-02
Levin, Naum B (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C382S144000, C430S005000, C703S013000
Reexamination Certificate
active
07657864
ABSTRACT:
A method of selecting a plurality of lithography process parameters for patterning a layout on a wafer includes simulating how the layout will print on the wafer for a plurality of resolution enhancement techniques (RETs), where each RET corresponds to a plurality of lithography process parameters. For each RET, the edges of structures within the simulated layout can be classified based on manufacturability. RETs that provide optimal manufacturability can be selected. In this manner, the simulation tool can be used to determine the optimal combination of scanner setup and reticle type for minimizing the variation in wafer critical dimension (CD).
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Babcock Carl P.
Capodieci Luigi
Haidinyak Chris
Kim Hung-eil
Lukanc Todd P.
Ditthavong Mori & Steiner, P.C.
Globalfoundries Inc.
Levin Naum B
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