Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-12-27
2005-12-27
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S243000, C438S238000
Reexamination Certificate
active
06979615
ABSTRACT:
A method for manufacturing a semiconductor device that comprises forming an oxide layer over a substrate. A polysilicon layer is disposed outwardly from the oxide layer, wherein the polysilicon layer forms a floating gate. A PSG layer is disposed outwardly from the polysilicon layer and planarized. The device is pattern etched to form a capacitor channel, wherein the capacitor channel is disposed substantially above the floating gate formed from the polysilicon layer. A dielectric layer is formed in the capacitor channel disposed outwardly from the polysilicon layer. A tungsten plug operable to substantially fill the capacitor channel is formed.
REFERENCES:
patent: 6495419 (2002-12-01), Ahmed et al.
Wolf, S. “Silicon Processing for the VLSI Era”, vol. 2-Process Integration, 1990, section 4.4.1.2, pp. 201-204 and section 4.5.4.2, pp. 247-251.
Hutter Louis N.
Khan Imran M.
Mitros Jozef C.
Nehrer William E.
Todd James
Brady III W. James
Garner Jacqueline J.
Geyer Scott B.
Lebentritt Michael S.
Telecky , Jr. Frederick J.
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