Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2007-05-23
2008-09-16
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S194000, C365S233100, C326S030000
Reexamination Certificate
active
07426145
ABSTRACT:
A synchronous semiconductor memory device having an on-die termination (ODT) circuit, and an ODT method, satisfy ODT DC and AC parameter specifications and perform an adaptive impedance matching through an external or internal control, by executing an ODT operation synchronized to an external clock. The synchronous semiconductor memory device having a data output circuit for performing a data output operation synchronously to the external clock includes the ODT circuit for generating ODT up and down signals having the same timing as data output up and down signals for the data output operation, to perform the ODT operation.
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Kyung Kye-Hyun
Lee Dong-Jin
Yoo Chang-Sik
Ho Hoai V
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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