Static information storage and retrieval – Read/write circuit – Precharge
Patent
1998-09-10
2000-01-25
Mai, Son
Static information storage and retrieval
Read/write circuit
Precharge
365191, 365194, G11C 800
Patent
active
RE0365327
ABSTRACT:
A semiconductor memory device according to the present invention having a plurality of memory banks, a row address strobe signal buffer, a column address strobe signal buffer and a column address generator and performing a data access operation in response to the burst length and latency information related to a system clock having a predetermined frequency, comprises a device for generating a signal which automatically precharges one memory bank of the memory banks in response to the row address strobe signal and the signal having the burst length and latency information after an address operation for the memory bank is completed.
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Mai Son
Samsung Electronics Co,. Ltd.
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