Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2007-05-31
2010-12-14
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S959000
Reexamination Certificate
active
07851381
ABSTRACT:
A surface treatment method for a nitride crystal is a surface treatment method of chemically and mechanically polishing a surface of the nitride crystal. Oxide abrasive grains are used. The abrasive grains have a standard free energy of formation of at least −850 kJ/mol as a converted value per 1 mole of oxygen molecules and have a Mohs hardness of at least 4. The surface treatment method efficiently provides, for efficiently obtaining a nitride crystal substrate that can be used for a semiconductor device, the nitride crystal having the smooth and high-quality surface formed thereon.
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Irikura Masato
Ishibashi Keiji
Nakahata Seiji
Nishiura Takayuki
McDermott Will & Emery LLP
Perkins Pamela E
Smith Zandra
Sumitomo Electric Industries Ltd.
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