Surface preparation method for selective and non-selective...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S270000, C438S278000, C438S301000, C438S305000, C257SE21431

Reexamination Certificate

active

07344951

ABSTRACT:
According to one embodiment of the invention, a surface preparation method for selective and non-selective epitaxial growth includes providing a substrate having a gate region, a source region, and a drain region, etching a first portion of the source region and the drain region, and removing a second portion of the source region and the drain region by a plasma comprising a noble gas and oxygen.

REFERENCES:
patent: 4895810 (1990-01-01), Meyer et al.
patent: 5508539 (1996-04-01), Gilbert et al.
patent: 5705417 (1998-01-01), Tseng
patent: 6541343 (2003-04-01), Murthy et al.
patent: 6812103 (2004-11-01), Wang et al.
patent: 2005/0095795 (2005-05-01), Son et al.

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