Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-09-13
2008-03-18
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S270000, C438S278000, C438S301000, C438S305000, C257SE21431
Reexamination Certificate
active
07344951
ABSTRACT:
According to one embodiment of the invention, a surface preparation method for selective and non-selective epitaxial growth includes providing a substrate having a gate region, a source region, and a drain region, etching a first portion of the source region and the drain region, and removing a second portion of the source region and the drain region by a plasma comprising a noble gas and oxygen.
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Mansoori Majid M.
Siddiqui Shirin
Smith Patricia B.
Brady III W. James
Lebentritt Michael
Lee Kyoung
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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