Substrate isolation process to minimize junction leakage

Details Substrate isolation process to minimize junction leakage Substrate isolation process to minimize junction leakage

1997-02-19

1998-06-09

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

H01L 2176

Patent

active

057633169

ABSTRACT:
A process for creating field oxide isolation for the micron and sub-micron devices in the high density integrated circuits has been developed. The junction leakage problem resulted from the trenches in the substrate formed after the removal of the silicon nitride mask, is avoided. The encroachment of the "bird's beak" into the small active device region is also minimized by this invention. These goals are accomplished by the addition of a polysilicon or amorphous silicon refill layer in the trenches after the removal of the silicon nitride oxidation mask in the isolation region, prior to field oxide oxidation process.

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