Substrate having uniform tungsten silicide film and method of ma

Details Substrate having uniform tungsten silicide film and method of ma Substrate having uniform tungsten silicide film and method of ma

1997-05-27

1999-12-07

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

438683, C23C 1642

Patent

active

05997950&

ABSTRACT:
A tungsten silicide film is deposited on a substrate from a premixed deposition gas mixture comprising: (i) silicon source gas, such as SiCl.sub.2 H.sub.2 and (ii) tungsten source gas, such as WF.sub.6. A seeding gas, such as silane, is used during the initial deposition stages to deposit a substantially uniform interfacial WSi.sub.x layer on the substrate, so that the tungsten to silicon ratio of the WSi.sub.x layer is substantially uniform through the thickness of the WSi.sub.x film. An apparatus for performing the process is also described.

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patent: 5500249 (1996-03-01), Telford et al.
Wu et al. "Properties using dichlorosilane in a single-wafer system", J. Vac. Sci. Technol. B6(6), Nov./Dec. 1988.

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