Structures containing titanium silicon oxide

Details Structures containing titanium silicon oxide Structures containing titanium silicon oxide

2010-03-24

2011-12-13

Coleman, William D (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

Reexamination Certificate

active

08076249

ABSTRACT:
A dielectric containing a titanium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric provide a dielectric for use in a variety of electronic devices. Embodiments include a dielectric containing a titanium silicon oxide film arranged as one or more monolayers. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectrics containing a titanium silicon oxide film, and methods for forming such structures.

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