Structures and methods for improving solder bump connections...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S012000, C438S013000, C438S106000, C438S754000, C438S612000, C438S613000, C438S614000, C257S779000, C257S737000, C257SE23069, C257S738000

Reexamination Certificate

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07985671

ABSTRACT:
Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The method includes forming an upper wiring layer in a dielectric layer and depositing one or more dielectric layers on the upper wiring layer. The method further includes forming a plurality of discrete trenches in the one or more dielectric layers extending to the upper wiring layer. The method further includes depositing a ball limiting metallurgy or under bump metallurgy in the plurality of discrete trenches to form discrete metal islands in contact with the upper wring layer. A solder bump is formed in electrical connection to the plurality of the discrete metal islands.

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patent: 7176583 (2007-02-01), Daubenspeck et al.
patent: 2005/0093113 (2005-05-01), Lin et al.
patent: 2006/0131748 (2006-06-01), Seshan

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