Structured strained substrate for forming strained...

Details Structured strained substrate for forming strained... Structured strained substrate for forming strained...

2009-07-23

2011-10-04

Everhart, Caridad (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S419000, C438S405000, C257SE21546, C257SE21115

Reexamination Certificate

active

08030148

ABSTRACT:
In a strained SOI semiconductor layer, the stress relaxation which may typically occur during the patterning of trench isolation structures may be reduced by selecting an appropriate reduced target height of the active regions, thereby enabling the formation of transistor elements on the active region of reduced height, which may still include a significant amount of the initial strain component. The active regions of reduced height may be advantageously used for forming fully depleted field effect transistors.

REFERENCES:
patent: 6764908 (2004-07-01), Kadosh et al.
patent: 7528078 (2009-05-01), Van Gompel et al.
patent: 2004/0150042 (2004-08-01), Yeo et al.
patent: 2005/0095807 (2005-05-01), Xiang
patent: 2005/0205859 (2005-09-01), Currie et al.
patent: 2005/0260810 (2005-11-01), Cheng et al.
patent: 2006/0284252 (2006-12-01), Boussagol et al.
patent: 2008/0213962 (2008-09-01), Clifton
Lei et al., “Strain relaxation in patterned strained silicon directly on insulator structures,”Applied Physics Letters, 87:251926-1-3, 2005.
PCT Search Report from PCT/EP2009/006261 dated Mar. 4, 2010.
PCT Preliminary Report on Patentability from PCT/EP2009/006261 dated Nov. 10, 2010.

Affiliated with

Also associated with

Rating

Structured strained substrate for forming strained... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structured strained substrate for forming strained..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structured strained substrate for forming strained... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4296367