Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-02-27
2010-12-28
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S775000, C257SE21585, C257SE23145, C257SE23153
Reexamination Certificate
active
07859113
ABSTRACT:
Structures including a refractory metal collar at a copper wire and dielectric layer liner-less interface, and a related method, are disclosed. In one embodiment, a structure includes a copper wire having a liner-less interface with a dielectric layer thereabove; a via extending upwardly from the copper wire through the dielectric layer; and a refractory metal collar extending from a side of the via and partially along the liner-less interface. Refractory metal collar prevents electromigration induced slit voiding by improving the interface around the via, and prevents void nucleation from occurring near the via. Also, the refractory metal collar provides electrical redundancy in the presence of voids around the via and dielectric layer liner-less interface.
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Edelstein Daniel C.
Nogami Takeshi
Wang Ping-Chuan
Wang Yun-Yu
Yang Chih-Chao
Brown Katherine S.
Hoffman Warnick LLC
International Business Machines - Corporation
Lee Hsien-ming
Parendo Kevin
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