Structure and method to reduce drain induced barrier lowering

Details Structure and method to reduce drain induced barrier lowering Structure and method to reduce drain induced barrier lowering

2006-06-27

2006-06-27

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07067381

ABSTRACT:
Embodiments of the present invention include a method for manufacturing a transistor comprising forming a gate conductor above a semiconductor substrate; forming a lightly doped implant region within the substrate, wherein the lightly doped implant region is substantially on the source side of the transistor; and forming a counter doping implant region within the substrate, wherein the counter-doping implant region is substantially on the drain side and wherein the counter-doping reduces the net channel impurity concentration on the drain side.

REFERENCES:
patent: 5976937 (1999-11-01), Rodder et al.
patent: 000535917 (1992-09-01), None

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