Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2010-10-19
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257S328000, C257S329000, C257SE21410, C438S216000, C438S269000, C438S261000, C438S270000, C438S271000, C438S591000, C438S593000
Reexamination Certificate
active
07816728
ABSTRACT:
The present invention provides two-transistor silicon-oxide-nitride-oxide-semiconductor (2-Tr SONOS) non-volatile memory cells with randomly accessible storage locations as well as method of fabricating the same. In one embodiment, a 2-Tr SONOS cell is provided in which the select transistor is located within a trench structure having trench depth from 1 to 2 μm and the memory transistor is located on a surface of a semiconductor substrate adjoining the trench structure. In another embodiment, a 2-Tr SONOS memory cell is provided in which both the select transistor and the memory transistor are located within a trench structure having the depth mentioned above.
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Ho Herbert L.
Mandelman Jack A.
Ning Tak H.
Otani Yoichi
Abate Esq. Joseph P.
Gebremariam Samuel A
Gurley Lynne A
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
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