Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2008-05-20
2008-05-20
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C324S763010
Reexamination Certificate
active
07375371
ABSTRACT:
A structure is provided which includes at least one semiconductor device and a diffusion heater in a continuous active semiconductor area of a substrate. One or more semiconductor devices are provided in a first region of the active semiconductor area and a diffusion heater is disposed adjacent thereto which consists essentially of a semiconductor material included in the active semiconductor area. Conductive isolation between the first region and the diffusion heater is achieved through use of a separating gate. The separating gate overlies an intermediate region of the active semiconductor area between the first region and the diffusion heater and the separating gate is biasable to conductively isolate the first region from the diffusion heater.
REFERENCES:
patent: 5751015 (1998-05-01), Corbett et al.
patent: 6456104 (2002-09-01), Guarin et al.
Kolvenbach Kevin W.
La Rosa Giuseppe
Massey John Greg
Wang Ping-Chuan
Xiu Kai
International Business Machines - Corporation
Jaklitsch Lisa U.
Neff Daryl K.
Pert Evan
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