Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-03-23
2009-11-10
Pham, Thanh V. (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S751000, C257SE23141, C257SE21495, C257SE21023, C257SE21246, C257SE21486, C257S701000, C257S704000, C257S707000, C216S041000, C216S042000, C216S049000, C438S736000, C428S201000
Reexamination Certificate
active
07615482
ABSTRACT:
Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.
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Demos Alexandros
Edelstein Daniel C.
Gates Stephen M.
Grill Alfred
Molis Steven E.
Applied Materials Inc.
International Business Machines - Corporation
Jaklitsch Lisa U.
Karimy Mohammad T
Pham Thanh V.
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