Structure and method for metallization of semiconductor devices

Details Structure and method for metallization of semiconductor devices Structure and method for metallization of semiconductor devices

1995-04-27

1996-09-10

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257771, A01L 2348, A01L 2352, A01L 2940

Patent

active

055548890

ABSTRACT:
A metallization alloy for semiconductor devices comprising aluminum, copper, and tungsten is provided. In a method for applying the metallization, the metal is sputtered onto a semiconductor substrate having devices formed therein. After deposition, the metallization is patterned and etched using conventional semiconductor photoresist and etch techniques.

REFERENCES:
patent: 3725309 (1973-04-01), Ames et al.
patent: 4970176 (1990-11-01), Tracy et al.
1-.mu.m EPIC Process Enhances TI's CMOS logic circuits--Electronics Design--Jun. 1986 p.21.

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