Structure and method for manufacturing asymmetric devices

Details Structure and method for manufacturing asymmetric devices Structure and method for manufacturing asymmetric devices

2009-10-20

2011-10-11

Sefer, Ahmed (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S163000, C438S179000, C438S217000, C438S231000, C257SE21415, C257SE21621

Reexamination Certificate

active

08034692

ABSTRACT:
A plurality of gate structures are formed on a substrate. Each of the gate structures includes a first gate electrode and source and drain regions. The first gate electrode is removed from each of the gate structures. A first photoresist is applied to block gate structures having source regions in a source-down direction. A first halo implantation is performed in gate structures having source regions in a source-up direction at a first angle. The first photoresist is removed. A second photoresist is applied to block gate structures having source regions in a source-up direction. A second halo implantation is performed in gate structures having source regions in a source-down direction at a second angle. The second photoresist is removed. Replacement gate electrodes are formed in each of the gate structures.

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