Structure and method for incorporating an inductively coupled pl

Details Structure and method for incorporating an inductively coupled pl Structure and method for incorporating an inductively coupled pl

1995-06-07

1997-01-07

Kunemund, Robert

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

1566431, 31511151, 427571, 118723I, C23C 1600

Patent

active

055914934

ABSTRACT:
A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.

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