Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-07-18
2006-07-18
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S005000
Reexamination Certificate
active
07078344
ABSTRACT:
A system and method for planarizing and controlling non-uniformity on a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple features in the pattern. The conductive interconnect material having an overburden portion. A bulk of the overburden portion is removed and a remaining portion of the overburden portion has a non-uniformity. The non-uniformity is mapped, optimal solution determined and a dynamic liquid meniscus etch process recipe is developed to correct the non-uniformity. A dynamic liquid meniscus etch process, using the dynamic liquid meniscus etch process recipe, is applied to correct the non-uniformity to substantially planarize the remaining portion of the overburden portion.
REFERENCES:
patent: 4838289 (1989-06-01), Kottman et al.
patent: 4985113 (1991-01-01), Fujimoto et al.
patent: 5009738 (1991-04-01), Gruenwald et al.
patent: 5098516 (1992-03-01), Norman et al.
patent: 5200031 (1993-04-01), Latchford et al.
patent: 5256565 (1993-10-01), Bernhardt et al.
patent: 5271774 (1993-12-01), Leenaars et al.
patent: 5302241 (1994-04-01), Cathey, Jr.
patent: 5380397 (1995-01-01), Fukuyama et al.
patent: 5387315 (1995-02-01), Sandhu
patent: 5534751 (1996-07-01), Lenz et al.
patent: 5556714 (1996-09-01), Fukuyama et al.
patent: 5705223 (1998-01-01), Bunkofske
patent: 5744402 (1998-04-01), Fukazawa et al.
patent: 5770100 (1998-06-01), Fukuyama et al.
patent: 5945351 (1999-08-01), Mathuni
patent: 5968847 (1999-10-01), Ye et al.
patent: 5997653 (1999-12-01), Yamasaka
patent: 6004188 (1999-12-01), Roy
patent: 6008130 (1999-12-01), Henderson et al.
patent: 6051496 (2000-04-01), Jang
patent: 6056864 (2000-05-01), Cheung
patent: 6083822 (2000-07-01), Lee
patent: 6096230 (2000-08-01), Scatz et al.
patent: 6133144 (2000-10-01), Tsai et al.
patent: 6140226 (2000-10-01), Grill et al.
patent: 6147005 (2000-11-01), Tu et al.
patent: 6153116 (2000-11-01), Yang et al.
patent: 6153530 (2000-11-01), Ye et al.
patent: 6174813 (2001-01-01), Wang
patent: 6184128 (2001-02-01), Wang et al.
patent: 6221775 (2001-04-01), Ference et al.
patent: 6227140 (2001-05-01), Kennedy et al.
patent: 6234870 (2001-05-01), Uzoh et al.
patent: 6313025 (2001-11-01), Chittipeddi et al.
patent: 6323121 (2001-11-01), Liu et al.
patent: 6331380 (2001-12-01), Ye et al.
patent: 6350364 (2002-02-01), Jang
patent: 6350664 (2002-02-01), Haji et al.
patent: 6352081 (2002-03-01), Lu et al.
patent: 6365327 (2002-04-01), Chittipeddi et al.
patent: 6368517 (2002-04-01), Hwang et al.
patent: 6383935 (2002-05-01), Lin et al.
patent: 6398975 (2002-06-01), Mertens et al.
patent: 6408786 (2002-06-01), Kennedy et al.
patent: 6417093 (2002-07-01), Xie et al.
patent: 6423200 (2002-07-01), Hymes
patent: 6440840 (2002-08-01), Chen
patent: 6448176 (2002-09-01), Grill et al.
patent: 6475298 (2002-11-01), O'Donnell et al.
patent: 6479391 (2002-11-01), Morrow et al.
patent: 6482331 (2002-11-01), Lu et al.
patent: 6482755 (2002-11-01), Ngo et al.
patent: 6486059 (2002-11-01), Lee et al.
patent: 6491764 (2002-12-01), Mertens et al.
patent: 6500357 (2002-12-01), Luo et al.
patent: 6517413 (2003-02-01), Hu et al.
patent: 6527911 (2003-03-01), Yen et al.
patent: 6559049 (2003-05-01), Chen et al.
patent: 6573187 (2003-06-01), Chen et al.
patent: 6576550 (2003-06-01), Brase et al.
patent: 6579800 (2003-06-01), Basol et al.
patent: 6582974 (2003-06-01), Lui et al.
patent: 6600229 (2003-07-01), Mukherjee et al.
patent: 6617232 (2003-09-01), Kim et al.
patent: 6620726 (2003-09-01), Preusse et al.
patent: 6630413 (2003-10-01), Todd
patent: 6653224 (2003-11-01), Gotkis et al.
patent: 6767829 (2004-07-01), Akahori
patent: 2001/0003060 (2001-06-01), Yokohama et al.
patent: 2001/0015175 (2001-08-01), Masuda et al.
patent: 2001/0018271 (2001-08-01), Yanagisawa
patent: 2001/0054381 (2001-12-01), Umotoy et al.
patent: 2002/0016084 (2002-02-01), Todd
patent: 2002/0045354 (2002-04-01), Ye et al.
patent: 2002/0081854 (2002-06-01), Morrow et al.
patent: 2002/0121500 (2002-09-01), Annapragada et al.
patent: 2002/0124867 (2002-09-01), Kim et al.
patent: 2002/0153350 (2002-10-01), Lu et al.
patent: 2002/0155695 (2002-10-01), Lee et al.
patent: 2002/0175071 (2002-11-01), Hymes
patent: 2002/0182853 (2002-12-01), Chen et al.
patent: 2002/0187627 (2002-12-01), Yuang
patent: 2002/0192957 (2002-12-01), Chien et al.
patent: 2002/0192966 (2002-12-01), Shanmugasundram et al.
patent: 2003/0013316 (2003-01-01), Kim et al.
patent: 2003/0029567 (2003-02-01), Dhindsa et al.
patent: 2003/0032278 (2003-02-01), Chen et al.
patent: 2003/0044725 (2003-03-01), Hsue et al.
patent: 2003/0045100 (2003-03-01), Saka et al.
patent: 2003/0049375 (2003-03-01), Nguyen et al.
patent: 2003/0057179 (2003-03-01), Luo et al.
patent: 2003/0073319 (2003-04-01), Basol et al.
patent: 2003/0082996 (2003-05-01), Fortin et al.
patent: 2003/0087586 (2003-05-01), Kaushal et al.
patent: 2003/0092260 (2003-05-01), Lui et al.
patent: 2003/0119305 (2003-06-01), Huang et al.
patent: 2003/0164354 (2003-09-01), Hsieh et al.
patent: 2003/0166345 (2003-09-01), Chang
patent: 2003/0184732 (2003-10-01), Katz et al.
patent: 2003/0186546 (2003-10-01), Wollstein et al.
patent: 2003/0196989 (2003-10-01), Zhou et al.
patent: 2003/0199112 (2003-10-01), Shanmugasundram et al.
patent: 2003/0203321 (2003-10-01), Ma et al.
patent: 2003/0211746 (2003-11-01), Chen et al.
patent: 2003/0213558 (2003-11-01), Basol et al.
patent: 2003/0224596 (2003-12-01), Marxsen et al.
patent: 2004/0242012 (2004-12-01), Ikeda
patent: 1 041 614 (2000-10-01), None
patent: 1 081 751 (2001-03-01), None
patent: 1 320 128 (2003-06-01), None
patent: 02280330 (1990-11-01), None
patent: 02309638 (1990-12-01), None
patent: 07230993 (1995-08-01), None
patent: 07235543 (1995-09-01), None
patent: 11 067766 (1999-03-01), None
patent: 11350169 (1999-12-01), None
patent: WO 99/46812 (1999-09-01), None
patent: WO 00/03426 (2000-01-01), None
patent: WO 00/59005 (2000-10-01), None
patent: WO 01/88229 (2001-11-01), None
patent: WO 02/37541 (2002-05-01), None
patent: WO 03/026004 (2003-03-01), None
patent: WO 03/058703 (2003-07-01), None
Tegal Corporation, “Enabling a Wireless World”, p. 1, http://www.tegal.com/.
Tegal Corporation, “Products Information”, p. 1-7, http://www.tegal.com/corp/corpinfo.html.
Tegal Corporation, “Products and Services”, p. 1, http://www.tegal.com/prod—srvcs/products—serv.html.
Tegal Corporation, “Products and Services, 6500 Hre Series”, pp. 1-3, http://www.tegal.com/prod—srvcs/6500—prod.html.
Tegal Corporation, “Products and Services, 900 Series”, pp. 1-4, http://www.tegal.com/prod—srvc/900—prod.html.
Tegal Corporation, “Products and Services, Tegal i90X—The Next Generation in Plasma Etch Technology”, pp. 1-4, http://www.tegal.com/prod—srvcs/i90x—data—sheet.html.
Nagraj S. Kulkrani, Robert T. DeHoff, “Application of Volatility Diagrams for Low Temperture Dry Etching and Planarization of Copper”, Journal of The Electromechanical Society, 2002, pp. G620-G632.
Kazuhide Ohno, Masaaki Sato, Yoshinobu Arita, “Reactive Ion Etching of Copper Films in SiCl4and N2Mixture”, Japanese Journal of Applied Physics, Jun. 1989, No. 6, Part 2, pp. 1070-1072.
K. Mosig, T. Jacobs, P. Kofron, M. Daniels, K. Brennan, A. Gonzales, R. Augur, J. Wetzel, R. Havemann, A. Shiota, “Single and Dual Damascene Integration of a Spin-on Porous Ultra low-k Material”,IEEE, 2001 pp. 292-294.
David T. Price, Ronald J. Gutmann, Shyam P. Murarka, “Damascene copper interconnects with polymer ILDs”, 1997 Thin Solid Films, pp. 523-528.
Dr. Victor Ku, Low-k Integration Challenges in the Year 2000, Industry Information—What's Up From SEMI—Industry Report, http://dom.semi.org/web/swemi.nsf/webdocs/9221127CB15550BB88256A4900738B6F.
INTEL, Intel 1.2 GHX All copper Pentium 3 Microprocessor Structural Analysis, Chipworks Reports, http://www
Bailey III Andrew D.
Korolik Mikhail
Ravkin Michael
Yadav Puneet
Lam Research Corporation
Martine & Penilla & Gencarella LLP
Smith Bradley K.
LandOfFree
Stress free etch processing in combination with a dynamic... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Stress free etch processing in combination with a dynamic..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Stress free etch processing in combination with a dynamic... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3575622