Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2006-03-29
2010-02-02
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C438S108000, C257SE21503, C257SE21508
Reexamination Certificate
active
07656042
ABSTRACT:
A method includes joining an integrated circuit die having at least one low-k dielectric layer to a package substrate or printed circuit board using a plurality of solder bumps located between the die and the package substrate or printed circuit board. The low-k dielectric layer has a dielectric constant of about 3.0 or less. The solder bumps have a lead concentration of about 5% or less. A stratified underfill is formed between the die and the package substrate or printed circuit board.
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Karta Tjandra Winata
Lee Chien-Hsiun
Lii Mirng-Ji
Lu Szu Wei
Duane Morris LLP
Hoang Quoc D
Koffs Steve E.
Taiwan Semiconductor Manufacturing Co. Ltd.
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