Strained silicon MOSFET having silicon source/drain regions...

Details Strained silicon MOSFET having silicon source/drain regions... Strained silicon MOSFET having silicon source/drain regions...

2005-02-08

2005-02-08

Niebling, John F. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S430000

Reexamination Certificate

active

06852600

ABSTRACT:
A strained silicon MOSFET utilizes a strained silicon layer formed on a silicon geranium layer. Strained silicon and silicon germanium are removed at opposing sides of the gate and are replaced by silicon regions. Deep source and drain regions are implanted in the silicon regions, and the depth of the deep source and drain regions does not extend beyond the depth of the silicon regions. By forming the deep source and drain regions in the silicon regions, detrimental effects of the higher dielectric constant and lower band gap of silicon geranium are reduced.

REFERENCES:
patent: 5266813 (1993-11-01), Comfort et al.
patent: 5943575 (1999-08-01), Chung
patent: 6071783 (2000-06-01), Liang et al.
patent: 6091076 (2000-07-01), Deleonibus
patent: 6492216 (2002-12-01), Yeo et al.
patent: 6503833 (2003-01-01), Ajmeral et al.
patent: 6509586 (2003-01-01), Awano
patent: 6555880 (2003-04-01), Cabral, Jr. et al.
patent: 6657223 (2003-12-01), Wang et al.
patent: 6703648 (2004-03-01), Xiang et al.
patent: 6730576 (2004-05-01), Wang et al.
patent: 20020109135 (2002-08-01), Murota et al.
patent: 20030057439 (2003-03-01), Fitzgerald
patent: 20030102490 (2003-06-01), Kubo et al.

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