Semiconductor device and method of fabricating semiconductor...

Details Semiconductor device and method of fabricating semiconductor... Semiconductor device and method of fabricating semiconductor...

2005-02-08

2005-02-08

Blum, David S. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

Reexamination Certificate

active

06853016

ABSTRACT:
To provide a semiconductor device which makes it possible to avoid deterioration in the step coverage property at a gate electrode provided on an operating region and decrease a leakage current between the operating region and the gate electrode. The semiconductor device arranged as a HEMT is made to include an operating region composed of multilayer films, such as a channel layer, an electron supplying layer and other semiconductor layer, and having an island structure independently mesa-isolated from one another. The semiconductor device also includes a gate electrode and an impurity diffusion layer provided on the surface of the operating region, the impurity diffusion layer being doped with an impurity having a conductivity type inverse to the impurity doped into the electron supplying layer.

REFERENCES:
patent: 5128276 (1992-07-01), Ambrosius et al.
patent: 5357119 (1994-10-01), Wang et al.
patent: 5793055 (1998-08-01), Kastalsky
patent: 6429468 (2002-08-01), Hsu et al.
patent: 6674100 (2004-01-01), Kubo et al.
patent: 6711723 (2004-03-01), Tsai et al.
patent: 03-066135 (1991-03-01), None
patent: 2003059945 (2003-02-01), None

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