Strained silicon layer fabrication with reduced dislocation...

Details Strained silicon layer fabrication with reduced dislocation... Strained silicon layer fabrication with reduced dislocation...

2006-09-12

2006-09-12

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S478000, C438S652000, C257S347000

Reexamination Certificate

active

07105393

ABSTRACT:
A strained silicon layer fabrication employs a substrate having successively formed thereover: (1) a first silicon-germanium alloy material layer; (2) a first silicon layer; (3) a second silicon-germanium alloy material layer; and (4) a second silicon layer. Within the fabrication each of the first silicon-germanium alloy layer and the second silicon-germanium alloy layer is formed of a thickness less than a threshold thickness for dislocation defect formation, such as to provide attenuated dislocation defect formation within the strained silicon layer fabrication.

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patent: 5534713 (1996-07-01), Ismail et al.
patent: 5759898 (1998-06-01), Ek et al.
patent: 5891769 (1999-04-01), Liaw et al.
patent: 6326667 (2001-12-01), Sugiyama et al.

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