Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-11-14
2006-11-14
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S305000
Reexamination Certificate
active
07135372
ABSTRACT:
A method of manufacturing a microelectronic device includes forming a p-channel transistor on a silicon substrate by forming a poly gate structure over the substrate and forming a lightly doped source/drain region in the substrate. An oxide liner and nitride spacer are formed adjacent to opposing side walls of the poly gate structure and a recess is etched in the semiconductor substrate on opposing sides of the oxide liner. Raised SiGe source/drain regions are formed on either side of the oxide liner and slim spacers are formed over the oxide liner. A hard mask over the poly gate structure is used to protect the poly gate structure during the formation of the raised SiGe source/drain regions. A source/drain dopant is then implanted into the substrate including the SiGe regions.
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Huang Ch'eng-Ch'uan
Huang Chien-Chao
Yang Fu-Liang
Booth Richard A.
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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