Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-17
2006-01-17
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C117S008000, C117S009000
Reexamination Certificate
active
06987037
ABSTRACT:
One aspect of this disclosure relates to a method for forming a strained silicon over silicon germanium (Si/SiGe) structure. In various embodiments, germanium ions are implanted into a silicon substrate with a desired dose and energy to be located beneath a surface silicon layer in the substrate. The implantation of germanium ions at least partially amorphizes the surface silicon layer. The substrate is heat treated to regrow a crystalline silicon layer over a resulting silicon germanium layer using a solid phase epitaxial (SPE) process. The crystalline silicon layer is strained by a lattice mismatch between the silicon germanium layer and the crystalline silicon layer. Other aspects are provided herein.
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Schwegman Lundberg Woessner & Kluth P.A.
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