Strained fully depleted silicon on insulator semiconductor...

Details Strained fully depleted silicon on insulator semiconductor... Strained fully depleted silicon on insulator semiconductor...

2007-12-11

2007-12-11

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S938000, C257SE21619

Reexamination Certificate

active

10986399

ABSTRACT:
A semiconductor substrate is provided having an insulator thereon with a semiconductor layer on the insulator. A deep trench isolation is formed, introducing strain to the semiconductor layer. A gate dielectric and a gate are formed on the semiconductor layer. A spacer is formed around the gate, and the semiconductor layer and the insulator are removed outside the spacer. Recessed source/drain are formed outside the spacer.

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