Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-01-08
2008-01-08
Malsawma, Lex (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S308000, C438S778000, C257SE21409
Reexamination Certificate
active
10889915
ABSTRACT:
Provided is a method of manufacturing a microelectronic device. In one example where the device includes a semiconductor substrate with a gate feature and a shallow junction, the method includes introducing dopants to the substrate to form a source region and a drain region. A strained layer may be formed over the substrate after introducing the dopants, and an annealing process may be performed after forming the strained layer.
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Haynes & Boone LLP
Malsawma Lex
Taiwan Semiconductor Manufacturing Company , Ltd.
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