Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-18
2006-07-18
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S254000, C257SE21647, C257SE21648, C257SE21649
Reexamination Certificate
active
07078292
ABSTRACT:
A storage node contact forming method and structure reduces the number of processes required by the conventional art and increases a critical dimension of a storage node to prevent a leaning phenomenon and reduce a manufacturing cost of semiconductor memory devices. The method includes preparing a semiconductor substrate that involves at least one contact pad contacted with an active region of a memory cell transistor through an insulation layer. The method also includes forming a storage node contact of T-shape, the storage node contact being composed of a lower region contacted with an upper part of the contact pad, and an upper region that is extended to a gate length direction of the memory cell transistor and that is formed as a size larger than a size of the lower region, in order to electrically connect the contact pad with a storage node to be formed in a later process.
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Hwang Yoo-Sang
Park Je-Min
Yun Cheol-Ju
Dang Trung
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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