Storage capacitor and method of manufacturing a storage...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S396000

Reexamination Certificate

active

11039740

ABSTRACT:
A storage capacitor suitable for use in a DRAM cell, as well as to a method of manufacturing such a storage capacitor is disclosed. The storage capacitor is formed at least partially above a semiconductor substrate surface. The invention also includes a memory array employing the storage capacitor.

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Jaegoo Lee et al., “Robust Memory Cell Capacitor using Multi-Stack Storage Node for High Performance in 90nm Technology and Beyond”, 2003 Symposium on VLSI Technology Digest of Technical Papers (2 pgs.).

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